NTHD2110T Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET -12 V, -6.4 A, Single P-Channel +TVS, ChipFET™ Package

NTHD2110T
AND PIN A
Power MOSFET
-12 V, -6.4 A, Single P-Channel +TVS,
ChipFETt Package
Features
•ăLow R_DS(on) MOSFET and TVS Diode ChipFET Package
•ăIntegrated Drain Side TVS for 15 kV Contact Discharge ESD
Protection
•ă1.8 V Gate Rating
•ăThis is a Pb-Free Device
Applications
•ăBattery Switch and Load Management Applications in Portable
Equipment
MOSFET MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
V_DSS
-12
V
Gate-to-Source Voltage
V_GS
"8
V
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady T_A = 25°C
I_D
State _{TA = 85°C}
t ≤ 5 s T_A = 25°C
Steady
P_D
State _{TA = 25°C}
t ≤5 s
-4.5
A
-3.2
-6.4
1.1
W
2.3
Operating Junction and Storage Temperature
T_J,
-55 to °C
T_STG
150
Storage Temperature Range
TJ
-55 to °C
150
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T_L
260 °C
TVS MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Peak Power Dissipation
8 x 20 ms Double Exponential Waveform
(Note 2)
PPK
150
W
Human Body Model (HBM)
Machine Model (MM)
IEC 61000-4-2 Specification (Contact)
ESD
16
kV
400
V
30
kV
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction-to-Ambient – Steady State (Note 1) R_qJA
110
Junction-to-Ambient – t ≤ 5 s (Note 1)
Junction-to-Ambient - Steady State Min Pad
(Note 3)
R_qJA
R_qJA
55
°C/W
225
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Nonrepetitive Current Pulse per Figure 11.
3. Surface Mounted on FR4 board using 1 in sq size (Cu area = 1.127 in sq
[1 oz] included traces).
http://onsemi.com
V_(BR)DSS
-12 V
R_DS(on) MAX
40 mW @ -4.5 V
53 mW @ -2.5 V
80 mW @ -1.8 V
I_D MAX
-6.4 A
V_RWM
12
TVS
V_C @ MAX I_PP
21.5
S
I_{PP MAX}
6.2 A
A
G
D
P-Channel MOSFET
C
TVS Diode
8
1
PIN
CONNECTIONS
ChipFET
CASE 1206A
STYLE 6
MARKING
DIAGRAM
1
8
A
C/D 1
8
2
7
D
D2
7
6
D
D3
6
3
G
S4
5
4
5
FTZ = Specific Device Code
M
= Month Code
G
= Pb-Free Package
ORDERING INFORMATION
Device
Package
Shipping^†
NTHD2110TT1G ChipFET 3000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2008
1
March, 2008 - Rev. 0
Publication Order Number:
NTHD2110T/D