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NTHD2102P Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET −8.0 V, −4.6 A Dual P−Channel ChipFET | |||
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NTHD2102P
Power MOSFET
â8.0 V, â4.6 A Dual PâChannel ChipFETt
Features
⢠Offers an Ultra Low RDS(on) Solution in the ChipFET Package
⢠Miniature ChipFET Package 40% Smaller Footprint than TSOPâ6
making it an Ideal Device for Applications where Board Space is at a
Premium
⢠Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
⢠Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
⢠Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
⢠Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
⢠PbâFree Package is Available
Applications
⢠Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
⢠Charge Control in Battery Chargers
⢠Buck and Boost Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DrainâtoâSource Voltage
GateâtoâSource Voltage â Continuous
Drain Current â Continuous
â 5 seconds
VDSS
â8.0
V
VGS
"8.0 V
ID
â3.4
A
ID
â4.6
Total Power Dissipation
Continuous @ TA = 25°C
(5 sec) @ TA = 25°C
Continuous @ 85°C
(5 sec) @ 85°C
PD
W
1.1
2.1
0.6
1.1
Operating Junction and Storage Temperature TJ, Tstg â55 to °C
Range
+150
Continuous Source Current
(Diode Conduction)
Is
â1.1
A
Thermal Resistance (Note 1)
JunctionâtoâAmbient, 5 sec
JunctionâtoâAmbient, Continuous
RqJA
RqJA
°C/W
60
113
Maximum Lead Temperature for Soldering
TL
260
°C
Purposes, 1/8â³ from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
http://onsemi.com
V(BR)DSS
â8.0 V
RDS(on) TYP
50 mW @ â4.5 V
68 mW @ â2.5 V
100 mW @ â1.8 V
ID MAX
â4.6 A
S1
S2
G1
G2
D1
PâChannel MOSFET
D2
PâChannel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
D1 8
1 S1
1
8
D1 7
2 G1 2
7
D2 6
3 S2
3
6
D2 5
4 G2 4
5
D5 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shippingâ
NTHD2102PT1 ChipFET 3000/Tape & Reel
NTHD2102PT1G ChipFET 3000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
December, 2004 â Rev. 4
Publication Order Number:
NTHD2102P/D
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