NTHC5513_16 Datasheet, PDF (1/9 Pages) ON Semiconductor – Power MOSFET

NTHC5513
Power MOSFET
20 V, +3.9 A / −3.0 A,
Complementary ChipFETt
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size, 40% Smaller than TSOP−6 Package
• Leadless SMD Package Featuring Complementary Pair
• ChipFET Package Provides Great Thermal Characteristics Similar to
Larger Packages
• Low R_DS(on) in a ChipFET Package for High Efficiency Performance
• Low Profile (< 1.10 mm) Allows Placement in Extremely Thin
Environments Such as Portable Electronics
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Load Switch Applications Requiring Level Shift
• DC−DC Conversion Circuits
• Drive Small Brushless DC Motors
• Designed for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
20
V
Gate−to−Source Voltage
V_GS
±12
V
Continuous Drain
Current (Note 1)
N−Ch T_A = 25°C
I_D
Steady
State ^TA ^{= 85°C}
2.9
A
2.1
t v 5 T_A = 25°C
3.9
P−Ch T_A = 25°C
I_D
Steady
State ^TA ^{= 85°C}
−2.2 A
−1.6
t v 5 T_A = 25°C
−3.0
Pulsed Drain Current
(Note 1)
N−Ch t = 10 ms
I_DM
12
A
P−Ch t = 10 ms
−9.0
Power Dissipation
(Note 1)
Steady
State
T_A = 25°C
P_D
1.1
W
tv5
Operating Junction and Storage
Temperature
T_A = 25°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
T_J,
T_STG
T_L
2.1
−55 to °C
150
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
www.onsemi.com
V_(BR)DSS
N−Channel
20 V
P−Channel
−20 V
R_DS(on) TYP
60 mW @ 4.5 V
80 mW @ 2.5 V
130 mW @ −4.5 V
200 mW @ −2.5 V
I_D MAX
3.9 A
−3.0 A
D1
S2
G1
G2
S1
N−Channel MOSFET
D2
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
D₁ 8
1 S₁
1
8
D₁ 7
2 G₁
2
7
D₂ 6
3 S₂
3
6
D₂ 5
4 G₂
4
5
C1 = Specific Device Code
M = Month Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping^†
NTHC5513T1G ChipFET 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
October, 2016 − Rev. 5
Publication Order Number:
NTHC5513/D