NTHC5513 Datasheet, PDF (1/10 Pages) ON Semiconductor – Power MOSFET 20 V, +3.9 A / −3.0 A, Complementary ChipFET-TM

NTHC5513
Power MOSFET
20 V, +3.9 A / −3.0 A,
Complementary ChipFETt
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size, 40% Smaller than TSOP−6 Package
• Leadless SMD Package Featuring Complementary Pair
• ChipFET Package Provides Great Thermal Characteristics Similar to
Larger Packages
• Low R_DS(on) in a ChipFET Package for High Efficiency Performance
• Low Profile (< 1.10 mm) Allows Placement in Extremely Thin
Environments Such as Portable Electronics
• Pb−Free Package is Available
Applications
• Load Switch Applications Requiring Level Shift
• DC−DC Conversion Circuits
• Drive Small Brushless DC Motors
• Designed for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
20
V
Gate−to−Source Voltage
V_GS
±12
V
Continuous Drain
Current (Note 1)
N−Ch T_A = 25°C
I_D
Steady
State ^TA ^{= 85°C}
2.9
A
2.1
t v 5 T_A = 25°C
3.9
P−Ch T_A = 25°C
I_D
Steady
State ^TA ^{= 85°C}
−2.2 A
−1.6
t v 5 T_A = 25°C
−3.0
Pulsed Drain Current
(Note 1)
N−Ch t = 10 ms
I_DM
12
A
P−Ch t = 10 ms
−9.0
Power Dissipation
(Note 1)
Steady
State
T_A = 25°C
P_D
1.1
W
t v 5 T_A = 25°C
2.1
Operating Junction and Storage
Temperature
T_J,
−55 to °C
T_STG
150
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
T_L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
http://onsemi.com
V_(BR)DSS
N−Channel
20 V
P−Channel
−20 V
R_DS(on) TYP
60 mW @ 4.5 V
80 mW @ 2.5 V
130 mW @ −4.5 V
200 mW @ −2.5 V
I_D MAX
3.9 A
−3.0 A
D1
S2
G1
G2
S1
N−Channel MOSFET
D2
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
D₁ 8
1 S₁
1
8
D₁ 7
2 G₁
2
7
D₂ 6
3 S₂
3
6
D₂ 5
4 G₂
4
5
C1 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping^†
NTHC5513T1 ChipFET 3000/Tape & Reel
NTHC5513T1G ^ChipFET 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
October, 2004 − Rev. 4
Publication Order Number:
NTHC5513/D