|
NTGS5120P_14 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET | |||
|
NTGS5120P, NVGS5120P
Power MOSFET
â60 V, â2.9 A, Single PâChannel, TSOPâ6
Features
⢠60 V BVds, Low RDS(on) in TSOPâ6 Package
⢠4.5 V Gate Rating
⢠NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECâQ101 Qualified and
PPAP Capable
⢠This is a PbâFree Device
Applications
⢠High Side Load Switch
⢠Power Switch for Printers, Communication Equipment
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
â60
V
GateâtoâSource Voltage
VGS
$20
V
Continuous Drain
Current (Note 1)
Steady TA = 25°C
ID
State TA = 85°C
â2.5
â2.0
A
t v 5 s TA = 25°C
â2.9
Power Dissipation
(Note 1)
Steady
PD
State TA = 25°C
tv5s
1.1
W
1.4
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
TA = 25°C
ID
Steady TA = 85°C
State
TA = 25°C
PD
â1.8
A
â1.3
0.6
W
Pulsed Drain Current tp = 10 ms
IDM
â20
A
Operating Junction and Storage Temperature
TJ,
â55 to °C
TSTG
150
Lead Temperature for Soldering Purposes
(1/8â from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surfaceâmounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
2. Surfaceâmounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
â60 V
RDS(ON) MAX
111 mW @ â10 V
142 mW @ â4.5 V
ID MAX
â2.9 A
PâChannel
1256
3
4
MARKING
DIAGRAM
TSOPâ6
CASE 318G
XX MG
1
STYLE 1
G
1
XX
= Device Code
M
= Date Code
G
= PbâFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 54
1 23
Drain Drain Gate
ORDERING INFORMATION
See detailed ordering and shipping information ion page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
August, 2014 â Rev. 1
Publication Order Number:
NTGS5120P/D
|
▷ |