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NTGS5120P_14 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET
NTGS5120P, NVGS5120P
Power MOSFET
−60 V, −2.9 A, Single P−Channel, TSOP−6
Features
• 60 V BVds, Low RDS(on) in TSOP−6 Package
• 4.5 V Gate Rating
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• This is a Pb−Free Device
Applications
• High Side Load Switch
• Power Switch for Printers, Communication Equipment
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source Voltage
VGS
$20
V
Continuous Drain
Current (Note 1)
Steady TA = 25°C
ID
State TA = 85°C
−2.5
−2.0
A
t v 5 s TA = 25°C
−2.9
Power Dissipation
(Note 1)
Steady
PD
State TA = 25°C
tv5s
1.1
W
1.4
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
TA = 25°C
ID
Steady TA = 85°C
State
TA = 25°C
PD
−1.8
A
−1.3
0.6
W
Pulsed Drain Current tp = 10 ms
IDM
−20
A
Operating Junction and Storage Temperature
TJ,
−55 to °C
TSTG
150
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
−60 V
RDS(ON) MAX
111 mW @ −10 V
142 mW @ −4.5 V
ID MAX
−2.9 A
P−Channel
1256
3
4
MARKING
DIAGRAM
TSOP−6
CASE 318G
XX MG
1
STYLE 1
G
1
XX
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 54
1 23
Drain Drain Gate
ORDERING INFORMATION
See detailed ordering and shipping information ion page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 1
Publication Order Number:
NTGS5120P/D