NTGS3130N_14 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NTGS3130N, NVGS3130N
Power MOSFET
20 V, 5.6 A Single
N-Channel, TSOP-6
Features
• Leading Edge Trench Technology for Low On Resistance
• Low Gate Charge for Fast Switching
• Small Size (3 x 2.75 mm) TSOP−6 Package
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• This is a Pb−Free Device
Applications
• DC−DC Converters
• Lithium Ion Battery Applications
• Load/Power Switching
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
20
V
Gate−to−Source Voltage
V_GS
±8
V
Steady ^{TA = 25°C}
Continuous Drain Current
(Note 1)
State
T_A = 85°C
I_D
t ≤ 10 s T_A = 25°C
5.6
4.1
A
6.2
Power Dissipation
(Note 1)
Steady
State _{TA = 25°C}
P_D
t ≤ 10 s
1.1
W
1.4
Continuous Drain Current
T_A = 25°C
(Note 2)
Steady T_A = 85°C
I_D
Power Dissipation
(Note 2)
State
T_A = 25°C P_D
4.2
A
3.0
0.6 W
Pulsed Drain Current
t_P ≤ 10 s
Operating and Storage Temperature Range
I_DM
19
A
T_J, T_stg
−55 to
150
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_S
1.0
A
T_L
260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
110
Junction−to−Ambient − t ≤ 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R_qJA
90
°C/W
200
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
http://onsemi.com
V_(BR)DSS
20 V
R_DS(on) mAX
24 mW @ 4.5 V
32 mW @ 2.5 V
N−Channel
Drain 1 2 5 6
I_D Max
5.6 A
4.9 A
Gate 3
Source 4
MARKING DIAGRAM &
PIN ASSIGNMENT
1
TSOP−6
CASE 318G
STYLE 1
Drain Drain Source
654
XX M G
G
123
Drain Drain Gate
XX
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information ion page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 1
Publication Order Number:
NTGS3130N/D