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NTGD4169F Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6 | |||
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NTGD4169F
Power MOSFET and
Schottky Diode
30 V, 2.9 A, NâChannel with Schottky
Barrier Diode, TSOPâ6
Features
⢠Fast Switching
⢠Low Gate Change
⢠Low RDS(on)
⢠Low VF Schottky Diode
⢠Independently Connected Devices to Provide Design Flexibility
⢠This is a PbâFree Device
Applications
⢠DCâDC Converters
⢠Portable Devices like PDAâs, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
30
V
GateâtoâSource Voltage
VGS
±12
V
NâChannel
Steady State TA = 25°C
ID
Continuous Drain
Current (Note 1)
TA = 85°C
t⤠5 s
TA = 25°C
2.6
A
1.9
2.9
Power Dissipation Steady State TA = 25°C
PD
(Note 1)
t⤠5 s
0.9
W
1.1
Pulsed Drain Current
tp = 10 ms
IDM
8.6
A
Operating Junction and Storage Temperature TJ, TSTG â25 to °C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
IS
0.9
A
TL
260
°C
SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
VRRM
30
V
DC Blocking Voltage
VR
30
V
Average Rectified Forward Current
IF
1
A
THERMAL RESISTANCE RATINGS
Parameter
JunctionâtoâAmbient â Steady State (Note
1)
Symbol
RqJA
Value
140
Unit
°C/W
JunctionâtoâAmbient â t ⤠5 s (Note 1)
RqJA
110 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
1
May, 2008 â Rev. 1
http://onsemi.com
NâCHANNEL MOSFET
V(BR)DSS
RDS(on) Max
ID Max
30 V
90 mW @ 4.5 V
125 mW @ 2.5 V
2.6 A
2.2 A
VR Max
30 V
SCHOTTKY DIODE
VF Max
0.53 V
IF Max
1.0 A
D
A
G
S
NâChannel MOSFET
K
Schottky Diode
MARKING
DIAGRAM
1
TSOPâ6
CASE 318G
STYLE 15
TD MG
G
1
TD = Specific Device Code
M = Date Code
G
= PbâFree Package
(Note: Microdot may be in either location)
PIN CONNECTION
A1
6K
S2
5 N/C
G3
4D
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
NTGD4169F/D
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