NTGD4167C Datasheet, PDF (1/10 Pages) ON Semiconductor – Power MOSFET Complementary, 30 V, +2.9/−2.2 A, TSOP−6 Dual

NTGD4167C
Power MOSFET
Complementary, 30 V, +2.9/−2.2 A,
TSOP−6 Dual
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size (3 x 3 mm) Dual TSOP−6 Package
• Leading Edge Trench Technology for Low On Resistance
• Reduced Gate Charge to Improve Switching Response
• Independently Connected Devices to Provide Design Flexibility
• This is a Pb−Free Device
Applications
• DC−DC Conversion Circuits
• Load/Power Switching with Level Shift
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage (N−Ch & P−Ch) V_GS
±12
V
N−Channel
Steady T_A = 25°C
I_D
Continuous Drain
Current (Note 1)
State
T_A = 85°C
t≤5s
T_A = 25°C
2.6
A
1.9
2.9
P−Channel
Steady T_A = 25°C
I_D
Continuous Drain
Current (Note 1)
State
T_A = 85°C
t≤5s
T_A = 25°C
−1.9
A
−1.4
−2.2
Power Dissipation Steady State T_A = 25°C
P_D
(Note 1)
t≤5s
0.9
W
1.1
Pulsed Drain
Current
N−Ch
P−Ch
t_p = 10 ms
I_DM
8.6
A
−6.3
Operating Junction and Storage Temperature T_J, T_STG −55 to °C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
±0.9
A
T_L
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1) R_qJA
140 °C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
R_qJA
110 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
http://onsemi.com
V_(BR)DSS
N−Ch
30 V
P−Ch
−30 V
R_DS(on) MAX
90 mW @ 4.5 V
125 mW @ 2.5 V
170 mW @ −4.5 V
300 mW @ −2.5 V
I_D MAX (Note 1)
2.6 A
2.2 A
−1.9 A
−1.0 A
D1
D2
G1
G2
S1
S2
N−CHANNEL MOSFET P−CHANNEL MOSFET
1
TSOP−6
CASE 318G
STYLE 13
MARKING
DIAGRAM
TA MG
G
1
TA = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
G1 ₁
S2 ₂
G2 ₃
6 ^D1
5 S1
4 _D2
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
December, 2008 − Rev. 1
Publication Order Number:
NTGD4167C/D