NTGD4161P_06 Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6

NTGD4161P
Power MOSFET
−30 V, −2.3 A, Dual P−Channel, TSOP−6
Features
• Fast Switching Speed
• Low Gate Charge
• Low R_DS(on)
• Independently Connected Devices to Provide Design Flexibility
• This is a Pb−Free Device
Applications
• Load Switch
• Battery Protection
• Portable Devices Like PDAs, Cellular Phones and Hard Drives
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−30
V
Gate−to−Source Voltage
V_GS
±20 V
Continuous Drain
Current (Note 1)
Steady T_A = 25°C
I_D
State
T_A = 85°C
−2.1 A
−1.5
t ≤ 5 s T_A = 25°C
−2.3
Power Dissipation
(Note 1)
Steady T_A = 25°C P_D
State
1.1 W
t≤5s
1.3
Continuous Drain
Current (Note 2)
Steady T_A = 25°C
State
T_A = 85°C
Power Dissipation (Note 2)
T_A = 25°C
Pulsed Drain Current
t_p = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_D
P_D
I_DM
T_J,
T_STG
I_S
T_L
−1.5 A
−1.1
0.6 W
−10 A
−55 to °C
150
−0.8 A
260 °C
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Ambient − t ≤ 5 s (Note 1)
Symbol
R_qJA
Max
115
225
95
Unit
°C/W
Junction−to−Case − Steady State (Note 1)
R_qJC
40
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in. pad size
(Cu. area = 1.2 in² [1 oz] including traces)
2. When surface mounted to an FR4 board using minimum recommended
pad size (Cu. area = 0.047 in²)
http://onsemi.com
V_(BR)DSS
−30 V
R_DS(on) Max
160 mW @ −10 V
280 mW @ −4.5 V
P−Channel
(MOSFET1)
D1
P−Channel
(MOSFET2)
D2
G1
G2
S1
S2
1
TSOP−6
CASE 318G
STYLE 13
MARKING DIAGRAM
D1 S1 D2
S8 MG
G
G1 S2 G2
S8
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NTGD4161PT1G TSOP−6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
September, 2006 − Rev. 1
Publication Order Number:
NTGD4161P/D