NTGD3147F Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET and Schottky Diode−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6

NTGD3147F
Power MOSFET and
Schottky Diode
−20 V, −2.5 A, P−Channel with Schottky
Barrier Diode, TSOP−6
Features
• Fast Switching
• Low Gate Change
• Low R_DS(on)
• Low V_F Schottky Diode
• Independently Connected Devices to Provide Design Flexibility
• This is a Pb−Free Device
Applications
• DC−DC Converters
• Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−20
V
Gate−to−Source Voltage
V_GS
±12
V
Continuous Drain Steady State T_A = 25°C
I_D
Current (Note 1)
T_A = 85°C
−2.2
A
−1.6
t≤ 5 s
T_A = 25°C
Power Dissipation Steady State T_A = 25°C
P_D
(Note 1)
t≤ 5 s
−2.5
1.0
W
1.3
Pulsed Drain Current
t_p = 10 ms
I_DM
−7.5
A
Operating Junction and Storage Temperature T_J, T_STG −25 to °C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
−0.8
A
T_L
260
°C
SCHOTTKY MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
V_RRM
20
V
DC Blocking Voltage
V_R
20
V
Average Rectified Forward Current
I_F
1
A
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady−State (Note 1) R_qJA
125 °C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
R_qJA
100 °C/W
Junction−to−Ambient Steady−State (Note 2)
R_qJA
235 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 30 mm² [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
1
May, 2008 − Rev. 0
http://onsemi.com
P−CHANNEL MOSFET
V_(BR)DSS
R_DS(on) Max
I_D Max
−20 V
145 mW @ −4.5 V
200 mW @ −2.5 V
−2.2 A
−1.6 A
V_R Max
20 V
SCHOTTKY DIODE
V_F Max
0.45 V
I_F Max
1.0 A
D
A
G
S
P−Channel MOSFET
K
Schottky Diode
MARKING
DIAGRAM
1
TSOP−6
CASE 318G
STYLE 15
TC MG
G
1
TC = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
A1
6K
S2
5 N/C
G3
4D
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTGD3147F/D