NTGD1100L_15 Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET

NTGD1100L, STGD1100L
Power MOSFET
8 V, ±3.3 A, Load Switch with Level−Shift,
P−Channel, TSOP−6
The NTGD1100L integrates a P and N−Channel MOSFET in a
single package. This device is particularly suited for portable
electronic equipment where low control signals, low battery voltages
and high load currents are needed. The P−Channel device is
specifically designed as a load switch using ON Semiconductor
state−of−the−art trench technology. The N−Channel, with an external
resistor (R1), functions as a level−shift to drive the P−Channel. The
N−Channel MOSFET has internal ESD protection and can be driven
by logic signals as low as 1.5 V. The NTGD1100L operates on supply
lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V
applied to both V_IN and V_ON/OFF
Features
• Extremely Low R_DS(on) Load Switch MOSFET
• Level Shift MOSFET is ESD Protected
• Low Profile, Small Footprint Package
• V_IN Range 1.8 to 8.0 V
• ON/OFF Range 1.5 to 8.0 V
• ESD Rating of 2000 V
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Input Voltage (V_DSS, P−Ch)
V_IN
8.0
V
ON/OFF Voltage (V_GS, N−Ch)
V_ON/OFF 8.0
V
Continuous Load Current Steady T_A = 25°C
I_L
(Note 1)
State
T_A = 85°C
±3.3
A
±2.4
Power Dissipation
(Note 1)
Steady T_A = 25°C P_D
State
T_A = 85°C
0.83 W
0.43
Pulsed Load Current
tp = 10 ms
I_LM
±10
A
Operating Junction and Storage Temperature
T_J,
−55 to °C
T_STG
150
Source Current (Body Diode)
ESD Rating, MIL−STD−883D HBM
(100 pF, 1.5 kW)
I_S
ESD
−1.0
A
2.0
kV
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2015
1
November, 2015 − Rev. 11
www.onsemi.com
V_(BR)DSS
8.0 V
R_DS(on) TYP
40 mW @ −4.5 V
55 mW @ −2.5 V
80 mW @ −1.8 V
I_D MAX
±3.3 A
SIMPLIFIED SCHEMATIC
4
2,3
Q2
6
5
Q1
1
MARKING DIAGRAM &
PIN ASSIGNMENT
1
TSOP−6
CASE 318G
STYLE 11
D1/G2 G1 S2
654
TZ M G
G
1 23
S1 D2 D2
TZ
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NTGD1100LT1G
Package
Shipping^†
TSOP−6 3000 / Tape & Reel
(Pb−Free)
STGD1100LT1G TSOP−6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTGD1100L/D