NTGD1100L Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET 8 V, ®.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6

NTGD1100L
Power MOSFET
8 V, ±3.3 A, Load Switch with Level−Shift,
P−Channel, TSOP−6
The NTGD1100L integrates a P and N−Channel MOSFET in a
single package. This device is particularly suited for portable
electronic equipment where low control signals, low battery voltages
and high load currents are needed. The P−Channel device is
specifically designed as a load switch using ON Semiconductor
state−of−the−art trench technology. The N−Channel, with an external
resistor (R1), functions as a level−shift to drive the P−Channel. The
N−Channel MOSFET has internal ESD protection and can be driven
by logic signals as low as 1.5 V. The NTGD1100L operates on supply
lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V
applied to both V_IN and V_ON/OFF
Features
• Extremely Low R_DS(on) Load Switch MOSFET
• Level Shift MOSFET is ESD Protected
• Low Profile, Small Footprint Package
• V_IN Range 1.8 to 8.0 V
• ON/OFF Range 1.5 to 8.0 V
• ESD Rating of 3000 V
• Pb−Free Package is Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Input Voltage (V_DSS, P−Ch)
V_IN
8.0
V
ON/OFF Voltage (V_GS, N−Ch)
V_ON/OFF 8.0
V
Continuous Load Current Steady T_A = 25°C
I_L
(Note 1)
State _{TA = 85°C}
±3.3
A
±2.4
Power Dissipation
(Note 1)
Steady T_A = 25°C P_D
State _{TA = 85°C}
0.83
W
0.43
Pulsed Load Current
tp = 10 ms
I_LM
±10
A
Operating Junction and Storage Temperature
T_J,
−55 to °C
T_STG
150
Source Current (Body Diode)
ESD Rating, MIL−STD−883D HBM
(100 pF, 1.5 kW)
I_S
ESD
−1.0
A
3.0
kV
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260
°C
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1) R_mJA
150 °C/W
Junction−to−Foot – Steady State (Note 1)
R_mJF
50
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2007
1
March, 2007 − Rev. 6
http://onsemi.com
V_(BR)DSS
8.0 V
R_DS(on) TYP
40 mW @ −4.5 V
55 mW @ −2.5 V
80 mW @ −1.8 V
I_D MAX
±3.3 A
SIMPLIFIED SCHEMATIC
4
2,3
Q2
6
5
Q1
1
1
TSOP−6
CASE 318G
STYLE 11
MARKING DIAGRAM &
PIN ASSIGNMENT
D1/G2 G1 S2
654
TZ M G
G
1 23
S1 D2 D2
TZ
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NTGD1100LT1
TSOP−6 3000/Tape & Reel
NTGD1100LT1G
TSOP−6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTGD1100L/D