NTFG3123P Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET Single N−Channel

NTGF3123P
Power MOSFET and
Schottky Diode
20 V, 2.5 A, P−Channel with Schottky
Barrier Diode, TSOP−6 Dual
Features
• FETKY® P−Channel and Schottky Diode
• Small Size (3 x 3 mm) Dual TSOP−6 Package
• Leading Edge Trench Technology for Low On Resistance
• Low VF Schottky Diode
• Common Drain/Cathode for Ease of Board Layout
• This is a Pb−Free Device
Applications
• DC−DC Converters; Configured as Asynchronous Buck
• Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
20
V
Gate−to−Source Voltage
V_GS
±12
V
Continuous Drain
Current (Note 1)
Steady ^TA ^{= 25°C}
I_D
State _{TA = 85°C}
2.3
A
1.6
t ≤ 5 s T_A = 25°C
2.5
Power Dissipation
(Note 1)
Steady
P_D
State _{TA = 25°C}
t ≤5 s
1.1
W
1.3
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
T_A = 25°C
I_D
Steady T_A = 85°C
State
T_A = 25°C
P_D
1.7
A
1.2
0.56
W
Pulsed Drain Current
t_p = 10 ms
I_DM
6.9
A
Operating Junction and Storage Temperature T_J, T_STG −25 to °C
150
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
0.9
A
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces). Both die on.
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.0465 in sq [2 oz] including traces). Both die on.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 0
http://onsemi.com
V_(BR)DSS
20 V
MOSFET
R_DS(on) MAX
145 mW @ 4.5 V
200 mW @ 2.5 V
I_D MAX (Note 1)
2.5 A
V_R MAX
20 V
SCHOTTKY DIODE
V_F TYP
0.40 V
I_F MAX
1.0 A
D
A
G
S
P−CHANNEL MOSFET
K
SCHOTTKY DIODE
MARKING
DIAGRAM
1
TSOP6
CASE 318G
S6 MG
G
1
S6 = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
A1
S2
G3
6 ^K/D
5 K/D
4 K/D
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTGF3123P/D