NTF6P02T3 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223

NTF6P02T3
Power MOSFET
-6.0 Amps, -20 Volts
P–Channel SOT–223
Features
• Low R_DS(on)
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
Typical Applications
• Power Management in Portables and Battery–Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
–6.0 AMPERES
–20 VOLTS
R_DS(on) = 44 mW (Typ.)
P–Channel
D
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
V_DSS
–20 Vdc
Gate–to–Source Voltage
V_GS
±8.0 Vdc
Drain Current (Note 1)
– Continuous @ T_A = 25°C
– Continuous @ T_A = 70°C
– Single Pulse (t_p = 10 µs)
I_D
–10 Adc
I_D
–8.4
I_DM
–35 Apk
Total Power Dissipation @ T_A = 25°C
P_D
8.3
W
Operating and Storage Temperature Range
T_J, T_stg –55 to °C
+150
Single Pulse Drain–to–Source Avalanche
Energy – Starting T_J = 25°C
(V_DD = –20 Vdc, V_GS = –5.0 Vdc,
I_L(pk) = –10 A, L = 3.0 mH, R_G = 25W)
E_AS
150 mJ
Thermal Resistance
– Junction to Lead (Note 1)
– Junction to Ambient (Note 2)
– Junction to Ambient (Note 3)
R_θJL
R_θJA
R_θJA
°C/W
15
71.4
160
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T_L
260 °C
1. Steady State.
2. When surface mounted to an FR4 board using 1″ pad size,
(Cu. Area 1.127 in²), Steady State.
3. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu. Area 0.412 in²), Steady State.
G
S
MARKING
DIAGRAM
1
2
3
4
SOT–223
CASE 318E
STYLE 3
AWW
6P02
A
WW
6P02
= Assembly Location
= Work Week
= Device Code
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package Shipping
NTF6P02T3
SOT–223 4000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
1
September, 2002 – Rev. 0
Publication Order Number:
NTF6P02T3/D