NTF3055-160 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223

NTF3055-160
Preferred Device
Power MOSFET
2.0 Amps, 60 Volts
N–Channel SOT–223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
VDSS 60
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
VDGR 60
Gate–to–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 10 ms)
VGS
± 20
± 30
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tp ≤ 10 µs)
ID
2.0
ID
1.2
IDM
6.0
Total Power Dissipation @ TA = 25°C (Note 1.) PD
2.1
Total Power Dissipation @ TA = 25°C (Note 2.)
1.3
Derate above 25°C
0.014
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg –55 to °C
175
Single Pulse Drain–to–Source Avalanche
EAS
65
mJ
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL(pk) = 6.0 Apk, L = 10 mH, VDS = 60 Vdc)
Thermal Resistance
– Junction to Ambient (Note 1.)
– Junction to Ambient (Note 2.)
R_θJA
R_θJA
°C/W
72.3
114
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260 °C
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu. Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2–2.4 oz. (Cu. Area 0.272 in2).
http://onsemi.com
2.0 AMPERES
60 VOLTS
RDS(on) = 160 mW
N–Channel
D
G
S
MARKING
DIAGRAM
1
2
3
4 _SOT–223
CASE 318E
STYLE 3
5160
LWW
5160
L
WW
= Device Code
= Location Code
= Work Week
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package Shipping
NTF3055–160T1
NTF3055–160T3
SOT–223 1000 Tape & Reel
SOT–223 4000 Tape & Reel
NTF3055–160T3LF SOT–223 4000 Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
July, 2001 – Rev. 0
Publication Order Number:
NTF3055–160/D