NTES1P02 Datasheet, PDF (1/4 Pages) ON Semiconductor – P–Channel Power MOSFET

NTES1P02
Product Preview
Power MOSFET
50 mAmps, 20 Volts
P–Channel SC–75
• Low Threshold Voltage: Vth = 0.5 to 1.5 V
• High Speed
• Small Package
• Complementary to NTES1N02
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
VDS
20
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
VGSS
7
ID
50
Total Power Dissipation @ TA = 25°C
Channel Temperature
Operating and Storage Temperature
Range
PD
100
Tch
150
Tstg – 55 to
150
Unit
Vdc
Vdc
mAdc
mW
°C
°C
http://onsemi.com
50 mAMPS
20 VOLTS
RDS(on) = 15 W
N–Channel
3
1
3
1
2
SC–75/SOT–416
CASE 463
2 ^{STYLE 1}
MARKING
DIAGRAM
P02
D
P02 = Device Code
D
= Date Code
PIN ASSIGNMENT
3 Drain
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
Gate 1
2 Source
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ORDERING INFORMATION
Device
Package
Shipping
NTES1P02
SC–75
3000 Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
January, 2001 – Rev. 0
Publication Order Number:
NTES1P02/D