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NTD6600N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK | |||
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NTD6600N
Power MOSFET
100 V, 12 A, NâChannel,
Logic Level DPAK
Features
⢠SourceâtoâDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
⢠Avalanche Energy Specified
⢠Logic Level
⢠PbâFree Packages are Available
Typical Applications
⢠PWM Motor Controls
⢠Power Supplies
⢠Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DrainâtoâSource Voltage
DrainâtoâSource Voltage (RGS = 1.0 MW)
GateâtoâSource Voltage
â Continuous
Drain Current â Continuous @ TA = 25°C
Drain Current â Continuous @ TA =100°C
Drain Current â Pulsed (Note 3)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
VDSS
VDGR
VGS
ID
ID
IDM
PD
100 Vdc
100 Vdc
± 20 Vdc
12 Adc
9.0
44 Apk
56.6 W
0.38 W/°C
1.76 W
1.28 W
Operating and Storage Temperature Range
TJ, Tstg â55 to °C
+175
Single Pulse DrainâtoâSource Avalanche
Energy â Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc,
IL = 12 Apk, L = 1.0 mH, RG = 25 W)
EAS
72
mJ
Thermal Resistance
â JunctionâtoâCase
â JunctionâtoâAmbient (Note 1)
â JunctionâtoâAmbient (Note 2)
RqJC
RqJA
RqJA
°C/W
2.65
85
117
Maximum Temperature for Soldering
Purposes, (1/8â³ from case for 10 s)
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
3. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
http://onsemi.com
V(BR)DSS
100 V
RDS(on) TYP
118 mW @ 5.0 V
ID MAX
12 A
NâChannel
D
G
S
12
3
MARKING
DIAGRAMS
4
Drain
4
DPAK
CASE 369C
(Surface Mounted)
STYLE 2
1
Gate
2
Drain
3
Source
4
1
2
3
DPAKâ3
CASE 369D
(Straight Lead)
STYLE 2
4
Drain
12 3
Gate Drain Source
Y
WW
NT6600
G
= Year
= Work Week
= Device Code
= PbâFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2007
1
March, 2007 â Rev. 4
Publication Order Number:
NTD6600N/D
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