NTD6416ANL Datasheet, PDF (1/7 Pages) ON Semiconductor – N-Channel Power MOSFET 100 V, 19 A, 74 mΩ

NTD6416ANL
N-Channel Power MOSFET
100 V, 19 A, 74 mW
Features
• Low R_DS(on)
• High Current Capability
• 100% Avalanche Tested
• These are Pb−Free Devices
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
100
V
Gate−to−Source Voltage − Continuous
V_GS
$20
V
Continuous Drain
Steady T_C = 25°C
I_D
Current
State
T_C = 100°C
19
A
13
Power Dissipation
Steady T_C = 25°C
P_D
State
71
W
Pulsed Drain Current
t_p = 10 ms
Operating and Storage Temperature Range
I_DM
70
A
T_J, T_stg −55 to °C
+175
Source Current (Body Diode)
I_S
Single Pulse Drain−to−Source Avalanche
E_AS
Energy (V_DD = 50 Vdc, V_GS = 10 Vdc, I_L(pk) =
18.2 A, L = 0.3 mH, R_G = 25 W)
Lead Temperature for Soldering
T_L
Purposes, 1/8″ from Case for 10 Seconds
19
A
50
mJ
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) − Steady State
R_qJC
2.1 °C/W
Junction−to−Ambient − Steady State (Note 1) R_qJA
47
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
http://onsemi.com
V_(BR)DSS
100 V
R_DS(on) MAX
74 mW @ 10 V
I_D MAX
19 A
D
G
4
12
3
DPAK
CASE 369AA
STYLE 2
S
4
1
2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
1
Gate
2
Drain
3
Source
1
Gate
6416ANL = Device Code
Y
= Year
WW
= Work Week
G
= Pb−Free Package
2
Drain
3
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
October, 2009 − Rev. 0
Publication Order Number:
NTD6416ANL/D