NTD6416AN Datasheet, PDF (1/7 Pages) ON Semiconductor – N-Channel Power MOSFET 100 V, 17 A, 81 m

NTD6416AN
N-Channel Power MOSFET
100 V, 17 A, 81 mW
Features
• Low R_DS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
100
V
Gate−to−Source Voltage − Continuous
V_GS
$20
V
Continuous Drain
Steady T_C = 25°C
I_D
Current
State
T_C = 100°C
17
A
11
Power Dissipation
Steady T_C = 25°C
P_D
State
71
W
Pulsed Drain Current
t_p = 10 ms
Operating and Storage Temperature Range
I_DM
62
A
T_J, T_stg −55 to °C
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V_DD = 50 Vdc, V_GS = 10 Vdc,
I_L(pk) = 17 A, L = 0.3 mH, R_G = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
I_S
17
A
E_AS
43
mJ
T_L
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
R_qJC
2.1 °C/W
Junction−to−Ambient (Note 1)
R_qJA
40
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
http://onsemi.com
V_(BR)DSS
100 V
R_DS(on) MAX
81 mW @ 10 V
I_D MAX
(Note 1)
17 A
N−Channel
D
G
4
12
3
DPAK
CASE 369AA
STYLE 2
S
4
1
2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
1
Gate
2
Drain
3
Source
1
Gate
6416AN
Y
WW
G
= Device Code
= Year
= Work Week
= Pb−Free Package
2
Drain
3
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
November, 2009 − Rev. 0
Publication Order Number:
NTD6416AN/D