NTD6415ANL_16 Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET

NTD6415ANL, NVD6415ANL
N-Channel Power MOSFET
100 V, 23 A, 56 mW, Logic
Level
Features
• Low R_DS(on)
• 100% Avalanche Tested
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
100
V
Gate−to−Source Voltage − Continuous
V_GS
$20
V
Continuous Drain
Steady T_C = 25°C
I_D
Current
State
T_C = 100°C
23
A
16
Power Dissipation
Steady T_C = 25°C
P_D
State
83
W
Pulsed Drain Current
t_p = 10 ms
Operating and Storage Temperature Range
I_DM
80
A
T_J, T_stg −55 to °C
+175
Source Current (Body Diode)
I_S
Single Pulse Drain−to−Source Avalanche
E_AS
Energy (V_DD = 50 Vdc, V_GS = 10 Vdc, I_L(pk) =
23 A, L = 0.3 mH, R_G = 25 W)
Lead Temperature for Soldering
T_L
Purposes, 1/8″ from Case for 10 Seconds
23
A
79
mJ
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) − Steady State
R_qJC
1.8 °C/W
Junction−to−Ambient − Steady State (Note 1) R_qJA
39
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
www.onsemi.com
V_(BR)DSS
100 V
R_DS(on) MAX
56 mW @ 4.5 V
52 mW @ 10 V
D
I_D MAX
23 A
G
S
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4 Drain
1
3
Gate ² Source
Drain
6415ANL = Device Code
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
August, 2016 − Rev. 4
Publication Order Number:
NTD6415ANL/D