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| NTD6415ANL Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET 100 V, 23 A, 56 mΩ, Logic Level | |||
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NTD6415ANL
N- Channel Power MOSFET
100 V, 23 A, 56 mΩ, Logic
Level
Features
ï· Low RDS(on)
ï· 100% Avalanche Tested
ï· AEC--Q101 Qualified
ï· These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25ï°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain--to--Source Voltage
VDSS
100
V
Gate--to--Source Voltage -- Continuous
VGS
±20
V
Continuous Drain
Steady TC = 25ï°C
ID
Current
State
TC = 100ï°C
23
A
16
Power Dissipation
Steady TC = 25ï°C
PD
State
83
W
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
IDM
80
A
TJ, Tstg --55 to ï°C
+175
Source Current (Body Diode)
IS
Single Pulse Drain--to--Source Avalanche
EAS
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
23 A, L = 0.3 mH, RG = 25 Ω)
Lead Temperature for Soldering
TL
Purposes, 1/8ï² from Case for 10 Seconds
23
A
79
mJ
260
ï°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction--to--Case (Drain) -- Steady State
RθJC
1.8 ï°C/W
Junction--to--Ambient -- Steady State (Note 1)
RθJA
39
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
http://onsemi.com
V(BR)DSS
100 V
RDS(on) MAX
56 mΩ @ 4.5 V
52 mΩ @ 10 V
D
ID MAX
23 A
G
S
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4 Drain
1
Gate
2
Drain
3
Source
6415ANL = Device Code
Y
= Year
WW
= Work Week
G
= Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ï£ Semiconductor Components Industries, LLC, 2010
1
March, 2010 -- Rev. 0
Publication Order Number:
NTD6415ANL/D
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