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NTD6414AN Datasheet, PDF (1/7 Pages) ON Semiconductor – N-Channel Power MOSFET 100 V, 32 A, 37 mΩ
NTD6414AN
N-Channel Power MOSFET
100 V, 32 A, 37 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
Continuous Drain
Steady TC = 25°C
ID
Current RqJC
State
TC = 100°C
32
A
22
Power Dissipation
Steady TC = 25°C
PD
RqJC
State
100
W
Pulsed Drain Current
tp = 10 ms
IDM
117
A
Operating and Storage Temperature Range
TJ, Tstg −55 to °C
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 32 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS
32
A
EAS
154
mJ
TL
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
RqJC
1.5 °C/W
Junction−to−Ambient (Note 1)
RqJA
37
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
http://onsemi.com
V(BR)DSS
100 V
RDS(on) MAX
37 mW @ 10 V
ID MAX
(Note 1)
32 A
N−Channel
D
G
4
12
3
DPAK
CASE 369AA
STYLE 2
S
4
1
2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
1
Gate
2
Drain
3
Source
1
Gate
6414AN
Y
WW
G
= Device Code
= Year
= Work Week
= Pb−Free Package
2
Drain
3
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
November, 2009 − Rev. 0
Publication Order Number:
NTD6414AN/D