NTD60N03 Datasheet, PDF (1/10 Pages) ON Semiconductor – Power MOSFET 60 Amps, 28 Volts

NTD60N03
Power MOSFET
60 Amps, 28 Volts
N-Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Drain Current - Continuous @ T_A = 25°C
Drain Current - Single Pulse (t_p = 10 ms)
Total Power Dissipation @ T_A = 25°C
Operating and Storage
Temperature Range
V_DSS
V_GS
I_D
I_DM
P_D
T_J, T_stg
28
±20
60*
120
75
- 55 to
150
Vdc
Vdc
Adc
Watts
°C
Single Pulse Drain-to-Source Avalanche
Energy - Starting T_J = 25°C
(V_DD = 28 Vdc, V_GS = 10 Vdc,
I_L = 17 Apk, L = 5.0 mH, R_G = 25 W)
Thermal Resistance
- Junction-to-Case
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
E_AS
R_qJC
R_qJA
R_qJA
T_L
733
mJ
°C/W
1.65
67
120
260
°C
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in²).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in²).
*Chip current capability limited by package.
http://onsemi.com
60 AMPERES
28 VOLTS
R_DS(on) = 6.1 mW (Typ.)
N-Channel
D
G
4
S
4
12
3
CASE 369A
DPAK
(Bend Lead)
STYLE 2
1 ₂₃
CASE 369
DPAK
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
YWW
T
4228
4
Drain
YWW
T
4228
1
2
Gate _Drain
Y
WW
T
4228
3
Source
1
Gate
= Year
= Work Week
= MOSFET
= Device Code
3
2 ^Source
Drain
ORDERING INFORMATION
Device
Package
Shipping
NTD60N03
DPAK
75 Units/Rail
NTD60N03T4
DPAK
2500 Tape & Reel
NTD60N03-1
DPAK
Straight Lead
75 Units/Rail
© Semiconductor Components Industries, LLC, 2003
1
March, 2003 - Rev. 5
Publication Order Number:
NTD60N03/D