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NTD5862NT4G Datasheet, PDF (1/8 Pages) ON Semiconductor – N-Channel Power MOSFET 60 V, 98 A, 5.7 m | |||
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NTD5862N, NTP5862N
N-Channel Power MOSFET
60 V, 98 A, 5.7 mW
Features
⢠Low RDS(on)
⢠High Current Capability
⢠100% Avalanche Tested
⢠These Devices are PbâFree, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
60
V
GateâtoâSource Voltage â Continuous
VGS
"20
V
GateâtoâSource Voltage
â NonâRepetitive (tp < 10 ms)
VGS
"30
V
Continuous Drain Cur-
TC = 25°C
ID
rent (RqJC) (Note 1)
Steady TC = 100°C
Power Dissipation
State TC = 25°C
PD
(RqJC)
98
A
69
115
W
Pulsed Drain Current
tp = 10 ms
IDM
335
A
Operating Junction and Storage Temperature TJ, Tstg â55 to °C
175
Source Current (Body Diode)
Single Pulse DrainâtoâSource Avalanche
Energy (L = 0.3 mH)
IS
96
A
EAS
205 mJ
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
JunctionâtoâCase (Drain)
RqJC
JunctionâtoâAmbient â Steady State (Note 2) RqJA
1. Limited by package to 50 A continuous.
2. Surfaceâmounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
Value
1.3
37
Unit
°C/W
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
5.7 mW @ 10 V
ID MAX
98 A
D
G
S
NâCHANNEL MOSFET
4
4
4
12
3
DPAK
1
2
3
CASE 369C
DPAK
(Surface Mount) CASE 369D
STYLE 2
(Straight Lead)
STYLE 2
1
2
3
TOâ220AB
CASE 221A
STYLE 5
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
4
Drain
Drain
NTP
5862NG
2
1 Drain 3
Gate Source
AYWW
1
Gate
3
Source
1 23
Gate Drain Source
2
A
= Assembly Location
Drain
Y
= Year
WW = Work Week
5862N = Device Code
G
= PbâFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
July, 2012 â Rev. 2
Publication Order Number:
NTD5862N/D
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