NTD5806N_16 Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET

NTD5806N, NVD5806N
Power MOSFET
40 V, 33 A, Single N−Channel, DPAK/IPAK
Features
• Low R_DS(on)
• High Current Capability
• Avalanche Energy Specified
• NVD and SVD Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CCFL Backlight
• DC Motor Control
• Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
40
V
Gate−to−Source Voltage − Continuous
V_GS
±20
V
Gate−to−Source Voltage
− Non−Repetitive (t_p < 10 mS)
V_GS
±30
V
Continuous Drain
Current (R_qJC)
(Note 1)
Power Dissipation
(R_qJC) (Note 1)
T_C = 25°C
I_D
Steady T_C = 100°C
State
T_C = 25°C
P_D
33
A
23
40
W
Pulsed Drain Current
t_p = 10 ms
I_DM
67
A
Operating Junction and Storage Temperature T_J, T_stg −55 to °C
175
Source Current (Body Diode)
I_S
33
A
Single Pulse Drain−to−Source Avalanche
E_AS
Energy (V_DD = 50 V, V_GS = 10 V, R_G = 25 W,
I_L(pk) = 28 A, L = 0.1 mH, V_DS = 40 V)
39
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
R_qJC
Junction−to−Ambient − Steady State (Note 1) R_qJA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
Value
3.7
57.5
Unit
°C/W
© Semiconductor Components Industries, LLC, 2016
1
July, 2016 − Rev. 7
www.onsemi.com
V_(BR)DSS
40 V
R_DS(on) MAX
26 mW @ 4.5 V
19 mW @ 10 V
D
I_D MAX
33 A
N−CHANNEL MOSFET
G
S
4
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
2
3
IPAK
CASE 369D
(Straight Lead DPAK)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 ^Drain 3
Gate Source
1 23
Gate Drain Source
A
= Assembly Location*
Y
= Year
WW = Work Week
5806N = Device Code
G
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTD5806N/D