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NTD5806N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK | |||
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NTD5806N
Power MOSFET
40 V, 33 A, Single NâChannel, DPAK/IPAK
Features
⢠Low RDS(on)
⢠High Current Capability
⢠Avalanche Energy Specified
⢠These are PbâFree Devices
Applications
⢠CCFL Backlight
⢠DC Motor Control
⢠Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
40
V
GateâtoâSource Voltage â Continuous
VGS
"20
V
GateâtoâSource Voltage
â NonâRepetitive (tp < 10 mS)
VGS
"30
V
Continuous Drain
Current (RqJC)
(Note 1)
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State
TC = 25°C
PD
33
A
23
40
W
Pulsed Drain Current
tp = 10 ms
IDM
67
A
Operating Junction and Storage Temperature TJ, Tstg â55 to °C
175
Source Current (Body Diode)
IS
33
A
Single Pulse DrainâtoâSource Avalanche
EAS
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 28 A, L = 0.1 mH, VDS = 40 V)
39
mJ
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
JunctionâtoâCase (Drain)
RqJC
JunctionâtoâAmbient â Steady State (Note 1) RqJA
1. Surfaceâmounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
Value
3.7
57.5
Unit
°C/W
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
26 mW @ 4.5 V
19 mW @ 10 V
D
ID MAX
33 A
G
S
NâCHANNEL MOSFET
4
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
2
3
IPAK
CASE 369D
(Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
Y
= Year
WW = Work Week
5806N = Device Code
G
= PbâFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
February, 2010 â Rev. 3
Publication Order Number:
NTD5806N/D
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