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NTD5803N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 40 V, 76 A, Single N−Channel, DPAK
NTD5803N
Power MOSFET
40 V, 76 A, Single N−Channel, DPAK
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• These are Pb−Free Devices
Applications
• CCFL Backlight
• DC Motor Control
• Class D Amplifier
• Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage − Continuous
VGS
"20
V
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
VGS
"30
V
Continuous Drain
Current (RqJC)
(Note 1)
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State
TC = 25°C
PD
76
A
54
83
W
Pulsed Drain Current
tp = 10 ms
IDM
228
A
Operating Junction and Storage Temperature TJ, Tstg −55 to °C
175
Source Current (Body Diode)
IS
Single Pulse Drain−to−Source Avalanche
EAS
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 40 A, L = 0.3 mH)
Lead Temperature for Soldering Purposes
TL
(1/8″ from case for 10 s)
76
A
240 mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient − Steady State (Note 1) RqJA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
Value
1.8
64
Unit
°C/W
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
10.1 mW @ 5.0 V
7.2 mW @ 10 V
D
ID MAX
54 A
76 A
G
S
N−CHANNEL MOSFET
4
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
2
3
DPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
Y
= Year
WW = Work Week
5803N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
December, 2008 − Rev. 0
Publication Order Number:
NTD5803N/D