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NTD5802N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 40 V, Single N−Channel, 101 A DPAK
NTD5802N
Power MOSFET
40 V, Single N−Channel, 101 A DPAK
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• MSL 1/260°C
• AEC Q101 Qualified
• 100% Avalanche Tested
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
• Motor Driver
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
"20
V
Continuous Drain Cur-
rent (RqJC) (Note 1)
TC = 25°C
ID
TC = 85°C
101
A
78
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
PD
Steady
Continuous Drain Cur- State TA = 25°C
ID
rent (RqJA) (Note 1)
TA = 85°C
93.75 W
16.4
A
12.7
Power Dissipation
(RqJA) (Note 1)
TA = 25°C
PD
2.5
W
Pulsed Drain Current tp=10ms TA = 25°C IDM
300
A
Current Limited by Package
TA = 25°C IDmaxPkg
45
A
Operating Junction and Storage Temperature TJ, Tstg −55 to °C
175
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
50
A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche En-
EAS
ergy (VDD = 32 V, VGS = 10 V,
L = 0.3 mH, IL(pk) = 40 A, RG = 25 W)
240 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
40 V
RDS(on)
4.4 mW @ 10 V
7.8 mW @ 5.0 V
D
ID
101 A
50 A
N−Channel
G
S
4
12
3
CASE 369C
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y
= Year
WW = Work Week
5802N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
April, 2009 − Rev. 4
Publication Order Number:
NTD5802N/D