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NTD5802N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 40 V, Single N−Channel, 101 A DPAK | |||
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NTD5802N
Power MOSFET
40 V, Single NâChannel, 101 A DPAK
Features
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠Optimized Gate Charge to Minimize Switching Losses
⢠MSL 1/260°C
⢠AEC Q101 Qualified
⢠100% Avalanche Tested
⢠These are PbâFree Devices
Applications
⢠CPU Power Delivery
⢠DCâDC Converters
⢠Motor Driver
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
40
V
GateâtoâSource Voltage
VGS
"20
V
Continuous Drain Cur-
rent (RqJC) (Note 1)
TC = 25°C
ID
TC = 85°C
101
A
78
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
PD
Steady
Continuous Drain Cur- State TA = 25°C
ID
rent (RqJA) (Note 1)
TA = 85°C
93.75 W
16.4
A
12.7
Power Dissipation
(RqJA) (Note 1)
TA = 25°C
PD
2.5
W
Pulsed Drain Current tp=10ms TA = 25°C IDM
300
A
Current Limited by Package
TA = 25°C IDmaxPkg
45
A
Operating Junction and Storage Temperature TJ, Tstg â55 to °C
175
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
50
A
6.0 V/ns
Single Pulse DrainâtoâSource Avalanche En-
EAS
ergy (VDD = 32 V, VGS = 10 V,
L = 0.3 mH, IL(pk) = 40 A, RG = 25 W)
240 mJ
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
40 V
RDS(on)
4.4 mW @ 10 V
7.8 mW @ 5.0 V
D
ID
101 A
50 A
NâChannel
G
S
4
12
3
CASE 369C
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y
= Year
WW = Work Week
5802N = Device Code
G
= PbâFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
April, 2009 â Rev. 4
Publication Order Number:
NTD5802N/D
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