NTD4909N_14 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET

NTD4909N
Power MOSFET
30 V, 41 A, Single N−Channel, DPAK/IPAK
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (R_qJA)
(Note 1)
V_DSS
30
V
V_GS
"20
V
T_A = 25°C
I_D
12.1
A
T_A = 100°C
8.6
Power Dissipation
(R_qJA) (Note 1)
Continuous Drain
Current (R_qJA)
(Note 2)
Power Dissipation
(R_qJA) (Note 2)
Continuous Drain
Current (R_qJC)
(Note 1)
T_A = 25°C
P_D
T_A = 25°C
I_D
Steady T_A = 100°C
State
T_A = 25°C
P_D
T_C = 25°C
I_D
T_C = 100°C
2.6
W
8.8
A
6.2
1.37
W
41
A
29
Power Dissipation
(R_qJC) (Note 1)
T_C = 25°C
P_D
29.4
W
Pulsed Drain Current t_p=10ms T_A = 25°C
I_DM
167
A
Current Limited by Package
T_A = 25°C I_DmaxPkg
60
A
Operating Junction and Storage Temperature T_J, T_stg −55 to °C
175
Source Current (Body Diode)
Drain to Source dV/dt
I_S
dV/dt
27
A
7.0 V/ns
Single Pulse Drain−to−Source Avalanche
E_AS
Energy (T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
L = 0.1 mH, I_L(pk) = 24 A, R_G = 25 W)
28
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
8.0 mW @ 10 V
12 mW @ 4.5 V
D
I_D MAX
41 A
N−Channel
G
S
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 ₂₃
1
2
3
CASE 369AD CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 ^Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
A
= Assembly Location
Y
= Year
WW = Work Week
4909N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
May, 2014 − Rev. 3
Publication Order Number:
NTD4909N/D