NTD4863NAT4G Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 25 V, 49 A, Single N--Channel, DPAK/IPAK

NTD4863N
Power MOSFET
25 V, 49 A, Single N--Channel, DPAK/IPAK
Features
• Trench Technology
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb--Free Devices
Applications
• VCORE Applications
• DC--DC Converters
• High Side Switching
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain--to--Source Voltage
Gate--to--Source Voltage
Continuous Drain
Current R_θJA
(Note 1)
V_DSS
25
V
V_GS
±20
V
T_A = 25°C
I_D
11.3
A
T_A = 85°C
8.8
Power Dissipation
R_θJA (Note 1)
T_A = 25°C
P_D
Continuous Drain
T_A = 25°C
ID
Current R_θJA
(Note 2)
Steady TA = 85°C
Power Dissipation
State
T_A = 25°C
P_D
R_θJA (Note 2)
Continuous Drain
Current R_θJC
(Note 1)
T_C = 25°C
I_D
T_C = 85°C
1.95
W
9.2
A
7.1
1.27
W
49
A
38
Power Dissipation
R_θJC (Note 1)
Pulsed Drain
Current
T_C = 25°C
t_p=10ms T_A = 25°C
Current Limited by Package
T_A = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain--to--Source Avalanche
Energy (T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L = 11 A_pk, L = 1.0 mH, R_G = 25 Ω)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
P_D
I_DM
I_DmaxPkg
T_J,
T_STG
I_S
dV/dt
EAS
T_L
36.6
98
35
--55 to
+175
30.5
6
60.5
260
W
A
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V_(BR)DSS
25 V
R_DS(ON) MAX
9.3 mΩ @ 10 V
14 mΩ @ 4.5 V
D
I_D MAX
49 A
G
S
N--CHANNEL MOSFET
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 ₂₃
1
23
CASE 369AC CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 ^Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y
= Year
WW = Work Week
4863N = Device Code
G
= Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
June, 2010 -- Rev. 2
Publication Order Number:
NTD4863N/D