NTD4854N Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 25 V, 128 A, Single N-Channel, DPAK/IPAK

NTD4854N
Power MOSFET
25 V, 128 A, Single N-Channel, DPAK/IPAK
Features
•ăTrench Technology
•ăLow R_DS(on) to Minimize Conduction Losses
•ăLow Capacitance to Minimize Driver Losses
•ăOptimized Gate Charge to Minimize Switching Losses
•ăThese are Pb-Free Devices
Applications
•ăVCORE Applications
•ăDC-DC Converters
•ăHigh/Low Side Switching
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
V_DSS
25
V
V_GS
±20
V
T_A = 25°C
I_D
20.8
A
T_A = 85°C
16.1
Power Dissipation
R_qJA (Note 1)
T_A = 25°C
P_D
Continuous Drain
T_A = 25°C
I_D
Current R_qJA
(Note 2)
Steady T_A = 85°C
State
Power Dissipation
T_A = 25°C
P_D
R_qJA (Note 2)
Continuous Drain
Current R_qJC
(Note 1)
T_C = 25°C
I_D
T_C = 85°C
2.5
W
15.7
A
12.2
1.43
W
128
A
99
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
P_D
Pulsed Drain
Current
t_p=10ms T_A = 25°C
I_DM
93.75 W
255
A
Current Limited by Package
T_A = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
I_DmaxPkg
T_J,
T_STG
I_S
dV/dt
45
-55 to
+175
78
6
A
°C
A
V/ns
Single Pulse Drain-to-Source Avalanche
Energy (T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L = 26 A_pk, L = 1.0 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T_L
338
mJ
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V_(BR)DSS
25 V
R_DS(ON) MAX
3.6 mW @ 10 V
4.7 mW @ 4.5 V
D
I_D MAX
128 A
G
S
N-CHANNEL MOSFET
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 ₂₃
1
2
3
CASE 369AC CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 ^Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y
= Year
WW = Work Week
4854N = Device Code
G
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©Ă Semiconductor Components Industries, LLC, 2008
1
April, 2008 - Rev. 1
Publication Order Number:
NTD4854N/D