NTD4809N_14 Datasheet, PDF (1/9 Pages) ON Semiconductor – Power MOSFET

NTD4809N, NVD4809N
Power MOSFET
30 V, 58 A, Single N−Channel, DPAK/IPAK
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• AEC Q101 Qualified − NVD4809N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (R_qJA) (Note 1)
Power Dissipation
(R_qJA) (Note 1)
Continuous Drain
Current (R_qJA) (Note 2)
Power Dissipation
(R_qJA) (Note 2)
Continuous Drain
Current (R_qJC)
(Note 1)
Steady
State
T_A = 25°C
T_A = 85°C
T_A = 25°C
T_A = 25°C
T_A = 85°C
T_A = 25°C
T_C = 25°C
T_C = 85°C
V_DSS
V_GS
I_D
P_D
I_D
P_D
I_D
30
V
"20
V
13.1
A
10.1
2.63
W
9.6
A
7.4
1.4
W
58
A
45
Power Dissipation
(R_qJC) (Note 1)
T_C = 25°C
P_D
52
W
Pulsed Drain Current t_p=10ms T_A = 25°C I_DM
130
A
Current Limited by Package
T_A = 25°C I_DmaxPkg
45
A
Operating Junction and Storage Temperature T_J, T_stg −55 to °C
175
Source Current (Body Diode)
Drain to Source dV/dt
I_S
dV/dt
43
A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (V_DD = 24 V, V_GS = 10 V,
L = 1.0 mH, I_L(pk) = 13.5 A, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
E_AS
91.0 mJ
T_L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2014
1
June, 2014 − Rev. 14
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
9.0 mW @ 10 V
14 mW @ 4.5 V
D
I_D MAX
58 A
N−Channel
G
S
4
4
4
12
3
DPAK
CASE 369AA
(Bent Lead)
STYLE 2
1 ₂₃
1
2
3
IPAK
IPAK
CASE 369AD CASE 369D
(Straight Lead) (Straight Lead
STYLE 2 DPAK) STYLE 2
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 ^Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
A
= Assembly Location*
Y
= Year
WW = Work Week
4809N = Device Code
G
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTD4809N/D