NTD4809NA-1G Datasheet, PDF (1/8 Pages) ON Semiconductor – 25 V, 58 A, Single N- Channel, DPAK/IPAK

NTD4809NA
Advance Information
Power MOSFET
25 V, 58 A, Single N- Channel, DPAK/IPAK
Features
•ăLow R_DS(on) to Minimize Conduction Losses
•ăLow Capacitance to Minimize Driver Losses
•ăOptimized Gate Charge to Minimize Switching Losses
•ăThese are Pb-Free Devices
Applications
•ăCPU Power Delivery
•ăDC-DC Converters
•ăLow Side Switching
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (R_qJA) (Note 1)
Power Dissipation
(R_qJA) (Note 1)
Continuous Drain
Current (R_qJA) (Note 2)
Power Dissipation
(R_qJA) (Note 2)
Continuous Drain
Current (R_qJC)
(Note 1)
Steady
State
T_A = 25°C
T_A = 85°C
T_A = 25°C
T_A = 25°C
T_A = 85°C
T_A = 25°C
T_C = 25°C
T_C = 85°C
V_DSS
V_GS
I_D
P_D
I_D
P_D
I_D
25
V
"20
V
11.5
A
9.0
2.0
W
9.0
A
7.0
1.3
W
58
A
45
Power Dissipation
(R_qJC) (Note 1)
T_C = 25°C
P_D
52
W
Pulsed Drain Current t_p=10ms T_A = 25°C I_DM
130
A
Current Limited by Package
T_A = 25°C I_DmaxPkg
45
A
Operating Junction and Storage Temperature T_J, T_stg -ā55 to °C
175
Source Current (Body Diode)
Drain to Source dV/dt
I_S
dV/dt
43
A
6.0 V/ns
Single Pulse Drain-to-Source Avalanche
Energy (V_DD = 20 V, V_GS = 10 V,
L = 1.0 mH, I_L(pk) = 13.5 A, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
E_AS
91.0 mJ
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
http://onsemi.com
V_(BR)DSS
25 V
R_DS(on) MAX
9.0 mW @ 10 V
14 mW @ 4.5 V
D
I_D MAX
58 A
N-Channel
G
S
4
4
12
3
DPAK
(Bend Lead)
CASE 369C
STYLE 2
1
2
3
3 IPAK
DPAK
(Straight Lead) (Straight Lead)
CASE 369AD CASE 369D
STYLE 2
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 ^Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y
= Year
WW = Work Week
4809N = Device Code
G
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©Ă Semiconductor Components Industries, LLC, 2007
1
June, 2007 - Rev. P2
Publication Order Number:
NTD4809NA/D