NTD3808N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK

NTD3808N
Power MOSFET
16 V, 76 A, Single N-Channel, DPAK/IPAK
Features
•ăTrench Technology
•ăLow R_DS(on) to Minimize Conduction Losses
•ăLow Capacitance to Minimize Driver Losses
•ăOptimized Gate Charge to Minimize Switching Losses
•ăThese are Pb-Free Devices
Applications
•ăDC-DC Converters
•ăLow Side Switching
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current R_qJA
(Note 1)
V_DSS
16
V
V_GS
±16
V
T_A = 25°C
I_D
17
A
T_A = 85°C
13
Power Dissipation
R_qJA (Note 1)
T_A = 25°C
P_D
Continuous Drain
T_A = 25°C
I_D
Current R_qJA
(Note 2)
Steady T_A = 85°C
State
Power Dissipation
T_A = 25°C
P_D
R_qJA (Note 2)
Continuous Drain
Current R_qJC
(Note 1)
T_C = 25°C
I_D
T_C = 85°C
2.6
W
12
A
9.1
1.3
W
76
A
59
Power Dissipation
R_qJC (Note 1)
Pulsed Drain Current t_p=10ms
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
T_C = 25°C
T_A = 25°C
T_A = 25°C
P_D
I_DM
I_DmaxPkg
T_J,
T_STG
I_S
dV/dt
52
152
35
-55 to
+175
51
6
W
A
A
°C
A
V/ns
Single Pulse Drain-to-Source Avalanche
Energy (T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L = 14 A_pk, L = 0.3 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T_L
29.4 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V_(BR)DSS
16 V
R_DS(ON) MAX
5.8 mW @ 10 V
8.5 mW @ 4.5 V
D
I_D MAX
76 A
G
S
N-CHANNEL MOSFET
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 ₂₃
1
2
3
CASE 369AC CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 ^Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y
= Year
WW = Work Week
3808N = Device Code
G
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
©Ă Semiconductor Components Industries, LLC, 2007
1
December, 2007 - Rev. 0
Publication Order Number:
NTD3808N/D