NTD32N06LT4G Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 32 Amps, 60 Volts

NTD32N06L
Power MOSFET
32 Amps, 60 Volts
Logic Level, N-Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
•ăSmaller Package than MTB30N06VL
•ăLower R_DS(on), V_DS(on), and Total Gate Charge
•ăLower and Tighter V_SD
•ăLower Diode Reverse Recovery Time
•ăLower Reverse Recovery Stored Charge
•ăPb-Free Packages are Available
Typical Applications
•ăPower Supplies
•ăConverters
•ăPower Motor Controls
•ăBridge Circuits
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain-to-Source Voltage
Drain-to-Gate Voltage (R_GS = 10 MW)
Gate-to-Source Voltage
- Continuous
- Non-Repetitive (t_pv10 ms)
Drain Current - Continuous @ T_A = 25°C
- Continuous @ T_A = 100°C
- Single Pulse (t_pv10 ms)
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
Total Power Dissipation @ T_A = 25°C (Note 1)
Total Power Dissipation @ T_A = 25°C (Note 2)
Operating and Storage Temperature Range
V_DSS
V_DGR
V_GS
V_GS
I_D
I_D
I_DM
P_D
T_J, T_stg
60
60
"20
"30
32
22
90
93.75
0.625
2.88
1.5
-ā55 to
+175
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain-to-Source Avalanche
Energy - Starting T_J = 25°C (Note 3)
(V_DD = 50 Vdc, V_GS = 5 Vdc, L = 1.0 mH,
I_L(pk) = 25 A, V_DS = 60 Vdc, R_G = 25 W)
Thermal Resistance
- Junction-to-Case
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
E_AS
R_qJC
R_qJA
R_qJA
T_L
313
mJ
°C/W
1.6
52
100
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to FR4 board using 0.5 in pad size.
2. When surface mounted to FR4 board using minimum recommended pad size.
3. Repetitive rating; pulse width limited by maximum junction temperature.
©Ă Semiconductor Components Industries, LLC, 2007
1
June, 2007 - Rev. 5
http://onsemi.com
V_DSS
60 V
R_DS(ON) TYP
23.7 mW
I_D MAX
32 A
N-Channel
D
G
S
MARKING DIAGRAMS
& PIN ASSIGNMENTS
12
3
4
Drain
4
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
Gate
2
Drain
3
Source
4
1
2
3
DPAK
CASE 369D
(Straight Lead)
STYLE 2
4
Drain
12 3
Gate Drain Source
Y
WW
32N06L
G
= Year
= Work Week
= Device Code
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTD32N06L/D