NTD30N02 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 30 Amps, 24 Volts

NTD30N02
Power MOSFET
30 Amps, 24 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ T_A = 25°C
− Single Pulse (t_pv10 µs)
Total Power Dissipation @ T_A = 25°C
Operating and Storage Temperature Range
V_DSS
24 Vdc
V_GS
"20 Vdc
Adc
I_D
30
I_DM
100 Apk
P_D
75
W
T_J, T_stg − 55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 24 Vdc, V_GS = 10 Vdc,
L = 1.0 mH, I_L(pk) = 10 A, R_G = 25 Ω)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
E_AS
50 mJ
R_θJC
R_θJA
R_θJA
°C/W
1.65
67
120
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T_L
260 °C
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in²).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in²).
http://onsemi.com
30 AMPERES
24 VOLTS
R_DS(on) = 11.2 mW (Typ.)
N−Channel
D
G
S
MARKING
DIAGRAM
4
4
Drain
12
3
DPAK
CASE 369C
(Surface Mount)
Style 2
2
1 Drain 3
Gate
Source
D30N02
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping^†
NTD30N02
NTD30N02T4
DPAK
DPAK
75 Units/Rail
2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
March, 2004 − Rev. 2
Publication Order Number:
NTD30N02/D