NTD3055L170_12 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET

NTD3055L170,
NVD3055L170
Power MOSFET
9.0 A, 60 V, Logic Level, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t_pv10 ms)
Drain Current
− Continuous @ T_A = 25°C
− Continuous @ T_A = 100°C
− Single Pulse (t_pv10 ms)
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
Total Power Dissipation @ T_A = 25°C (Note 1)
Total Power Dissipation @ T_A = 25°C (Note 2)
Operating and Storage Temperature Range
V_DSS
V_DGR
V_GS
V_GS
I_D
I_D
I_DM
P_D
T_J, T_stg
60
60
"15
"20
9.0
3.0
27
28.5
0.19
2.1
1.5
−55 to
175
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 5.0 Vdc,
L = 1.0 mH, I_L(pk) = 7.75 A, V_DS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
E_AS
R_qJC
R_qJA
R_qJA
T_L
30
mJ
°C/W
5.2
71.4
100
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommen-
ded Operating Conditions is not implied. Extended exposure to stresses above
the Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
http://onsemi.com
9.0 AMPERES, 60 VOLTS
R_DS(on) = 170 mW
N−Channel
D
G
S
4
12
3
4
1
2
3
DPAK
CASE 369C
(Surface Mounted)
STYLE 2
DPAK−3
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
1 − Gate
2 − Drain
3 − Source
YWW
31
70LG
4
Drain
1 − Gate
2 − Drain
3 − Source
YWW
31
70LG
4
Drain
A
Y
WW
3170L
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
June, 2012 − Rev. 5
Publication Order Number:
NTD3055L170/D