NTD2955 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET

NTD2955
Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low−voltage, high−
speed switching applications in power supplies, converters, and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer an additional safety margin against unexpected
voltage transients.
Features
• Avalanche Energy Specified
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and
to Withstand High Energy in the Avalanche and Commutation Modes
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−60
Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 10 ms)
V_GS
± 20
Vdc
V_GSM
± 25
Vpk
Drain Current
Drain Current − Continuous @ T_a = 25°C
I_D
Drain Current − Single Pulse (t_p ≤ 10 ms)
I_DM
−12
Adc
−36
Apk
Total Power Dissipation @ T_a = 25°C
P_D
55
W
Operating and Storage Temperature
Range
T_J, T_stg − 55 to
°C
175
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc, Peak
I_L = 12 Apk, L = 3.0 mH, R_G = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
E_AS
R_qJC
R_qJA
R_qJA
216
mJ
2.73 °C/W
71.4
100
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8 in. from case for
10 seconds
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu area = 1.127 in²).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu area = 0.412 in²).
http://onsemi.com
V_(BR)DSS
−60 V
R_DS(on) TYP
155 mW @ −10 V, 6 A
I_D MAX
−12 A
P−Channel
D
G
S
MARKING
DIAGRAMS
4
12
3
4
4
Drain
DPAK
CASE 369C
STYLE 2
1
Gate
2
Drain
3
Source
4
Drain
DPAK−3
CASE 369D
STYLE 2
1
2
3
12 3
Gate Drain Source
NT2955
A
Y
W
Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
1
October, 2004 − Rev. 7
Publication Order Number:
NTD2955/D