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NTD20N06-001 Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK | |||
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NTD20N06, NTDV20N06
Power MOSFET
20 Amps, 60 Volts, NâChannel DPAK
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits.
Features
⢠Lower RDS(on)
⢠Lower VDS(on)
⢠Lower Capacitances
⢠Lower Total Gate Charge
⢠Lower and Tighter VSD
⢠Lower Diode Reverse Recovery Time
⢠Lower Reverse Recovery Stored Charge
⢠AEC Q101 Qualified â NTDV20N06
⢠These Devices are PbâFree and are RoHS Compliant
Typical Applications
⢠Power Supplies
⢠Converters
⢠Power Motor Controls
⢠Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DrainâtoâSource Voltage
DrainâtoâGate Voltage (RGS = 10 MW)
GateâtoâSource Voltage
â Continuous
â Nonârepetitive (tpv10 ms)
Drain Current
â Continuous @ TA = 25°C
â Continuous @ TA = 100°C
â Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
60
60
"20
"30
20
10
60
60
0.40
1.88
1.36
â55 to
175
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
W
W
°C
Single Pulse DrainâtoâSource Avalanche
Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
L = 1.0 mH, IL(pk) = 18.4 A, VDS = 60 Vdc)
Thermal Resistance
â JunctionâtoâCase
â JunctionâtoâAmbient (Note 1)
â JunctionâtoâAmbient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8â³ from case for 10 seconds
EAS
RqJC
RqJA
RqJA
TL
170 mJ
°C/W
2.5
80
110
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq in drain pad size.
© Semiconductor Components Industries, LLC, 2011
1
August, 2011 â Rev. 8
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
37.5 mW
ID MAX
20 A
NâChannel
D
G
S
12
3
MARKING
DIAGRAM
4
Drain
4
DPAK
CASE 369C
STYLE 2
1
Gate
2
Drain
3
Source
20N06
Y
WW
G
= Device Code
= Year
= Work Week
= PbâFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTD20N06/D
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