NTD20N03L27 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NTD20N03L27
Power MOSFET
20 Amps, 30 Volts, N−Channel DPAK
This logic level vertical power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.
Features
• Pb−Free Packages are Available
• Ultra−Low R_DS(on), Single Base, Advanced Technology
• SPICE Parameters Available
• Diode is Characterized for use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperatures
• High Avalanche Energy Specified
• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
Typical Applications
• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTD20N03L in many Applications
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t_pv10 ms)
Drain Current
− Continuous @ T_A = 25_C
− Continuous @ T_A = 100_C
− Single Pulse (t_pv10 ms)
Total Power Dissipation @ T_A = 25_C
Derate above 25°C
Total Power Dissipation @ T_C = 25°C (Note 1)
V_DSS
V_DGR
V_GS
V_GS
I_D
I_D
I_DM
P_D
30 Vdc
30 Vdc
Vdc
"20
"24
20 Adc
16
60 Apk
74
W
0.6 W/°C
1.75 W
Operating and Storage Temperature Range
T_J, T_stg − 55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 30 Vdc, V_GS = 5 Vdc, L = 1.0 mH,
I_L(pk) = 24 A, V_DS = 34 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
E_AS
288 mJ
R_qJC
R_qJA
R_qJA
T_L
°C/W
1.67
100
71.4
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size and repetitive rating; pulse width limited by maximum junction
temperature.
© Semiconductor Components Industries, LLC, 2004
1
August, 2004 − Rev. 2
http://onsemi.com
20 A, 30 V, R_DS(on) = 27 mW
N−Channel
D
G
4
12
3
S
MARKING
DIAGRAMS
4
Drain
DPAK
CASE 369C
STYLE 2
1
Gate
2
Drain
3
Source
4
1
2
3
DPAK−3
CASE 369D
STYLE 2
4
Drain
12 3
Gate Drain Source
20N3L
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTD20N03L27/D