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NTD15N06 Datasheet, PDF (1/10 Pages) ON Semiconductor – Power MOSFET 15 Amps, 60 Volts
NTD15N06
Power MOSFET
15 Amps, 60 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TJ = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
60 Vdc
60 Vdc
Vdc
"20
"30
ID
15 Adc
ID
10
IDM
45 Apk
PD
48
W
0.32 W/°C
2.1 W
1.5 W
TJ, Tstg − 55 to °C
+175
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH,
IL(pk) = 11 A, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
EAS
mJ
61
RqJC
RqJA
RqJA
°C/W
3.13
71.4
100
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260 °C
1. When surface mounted to an FR4 board using 0.5 sq. in. pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
15 AMPERES
60 VOLTS
RDS(on) = 76 mW (TYP)
N−Channel
D
G
4
12
3
DPAK
CASE 369C
(Surface Mount)
Style 2
4
S
MARKING DIAGRAMS
4
Drain
1
Gate
2
Drain
3
Source
4
Drain
1
2
3
DPAK
CASE 369D
(Straight Lead)
Style 2
15N06 Device Code
Y
= Year
WW
= Work Week
12 3
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
NTD15N06
DPAK
75 Units/Rail
NTD15N06−1
DPAK
Straight Lead
75 Units/Rail
NTD15N06T4
DPAK
2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
1
September, 2003 − Rev. 1
Publication Order Number:
NTD15N06/D