NTD14N03R Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 14 Amps, 25 Volts N−Channel DPAK

NTD14N03R
Power MOSFET
14 Amps, 25 Volts
N−Channel DPAK
Features
• Planar HD3e Process for Fast Switching Performance
• Low R_DS(on) to Minimize Conduction Loss
• Low C_iss to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
25 _Vdc
Gate−to−Source Voltage − Continuous
V_GS
±20 _Vdc
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ T_A = 25°C
Drain Current − Continuous @ T_A = 25°C, Chip
− Continuous @ T_A = 25°C, Limited by Package
− Single Pulse (tp ≤ 10 ms)
Thermal Resistance − Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T_A = 25°C
Drain Current − Continuous @ T_A = 25°C
Thermal Resistance − Junction−to−Ambient
(Note 2)
Total Power Dissipation @ T_A = 25°C
Drain Current − Continuous @ T_A = 25°C
Operating and Storage Temperature Range
R_qJC
P_D
I_D
I_D
I_D
R_qJA
P_D
I_D
R_qJA
P_D
I_D
T_J, T_stg
6.0 °C/W
20.8 W
14
A
11.4 A
28
A
80 °C/W
1.56 W
3.1
A
120 °C/W
1.04 W
2.5
A
−55 to °C
150
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T_L
260 °C
1. When surface mounted to an FR4 board using 0.5 sq. in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
http://onsemi.com
14 AMPERES, 25 VOLTS
R_DS(on) = 70.4 mW (Typ)
N−CHANNEL
D
G
S
4
4
12
3
CASE 369C
DPAK
(Surface Mount)
STYLE 2
1
2
3
CASE 369D
DPAK
(Straight Lead)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
1
Gate
2
Drain
3
Source
1
Gate
14N03 = Device Code
Y
= Year
WW = Work Week
2
Drain
3
Source
ORDERING INFORMATION
Device
NTD14N03R
NTD14N03R−1
Package
DPAK
DPAK
Straight Lead
Shipping
75 Units/Rail
75 Units/Rail
NTD14N03RT4
DPAK 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2003
1
October, 2003 − Rev. 3
Publication Order Number:
NTD14N03R/D