NTB75N03-6G Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 75 Amps, 30 Volts

NTP75N03−06,
NTB75N03−06
Power MOSFET
75 Amps, 30 Volts
N−Channel TO−220 and D²PAK
This 20 V_GS gate drive vertical Power MOSFET is a general
purpose part that provides the “best of design” available today in a low
cost power package. This power MOSFET is designed to withstand
high energy in the avalanche and commutation modes. The
Drain−to−Source Diode has a fast response with soft recovery.
Features
• Ultra−Low R_DS(on), Single Base, Advanced Technology
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperatures
• High Avalanche Energy Capability
• ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTP1306 and MTB1306
N−Channel
D
G
S
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) TYP
5.3 mW @ 10 V
I_D MAX
75 A
4
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
2
1
3
D²PAK
CASE 418AA
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
75N
03−06G
AYWW
1
Gate
3
Source
2
Drain
75N
03−06G
AYWW
1
Gate
2
Drain
3
Source
N75N03−06
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 6
Publication Order Number:
NTP75N03−06/D