NTB5412N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 60 Amps, 60 Volts N-Channel D2PAK, TO-220

NTB5412N, NTP5412N
Power MOSFET
60 Amps, 60 Volts
N-Channel D²PAK, TO-220
Features
• Low R_DS(on)
• High Current Capability
• Avalanche Energy Specified
• These are Pb−Free Devices
Applications
• LED Lighting and LED Backlight Drivers
• DC−DC Converters
• DC Motor Drivers
• Power Supplies Secondary Side Synchronous Rectification
MAXIMUM RATINGS (T_J = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
60
V
Gate−to−Source Voltage − Continuous
V_GS
$20
V
Gate−to−Source Voltage − Nonrepetitive
(T_P < 10 ms)
V_GS
$30
V
Continuous Drain
Steady T_C = 25°C
I_D
Current R_qJC
State
(Note 1)
T_C = 100°C
60
A
44
Power Dissipation
Steady T_C = 25°C
P_D
R_qJC (Note 1)
State
125
W
Pulsed Drain Current
t_p = 10 ms
I_DM
155
A
Operating and Storage Temperature Range
T_J, T_stg −55 to °C
175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 50 V_dc, V_GS = 10 V_dc, I_L(pk) = 60 A,
L = 0.1 mH, R_G = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
I_S
60
A
E_AS
180
mJ
T_L
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
(Note 1)
R_qJC
R_qJA
1.2 °C/W
43.2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
1
November, 2008 − Rev. 1
http://onsemi.com
V_(BR)DSS
60 V
R_DS(ON) MAX
14 mW @ 10 V
I_D MAX
(Note 1)
60 A
N−Channel
D
G
S
4
4
12
3
1
2
3
TO−220AB
CASE 221A
STYLE 5
D²PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Drain
NTP
5412NG
AYWW
1
Gate
3
Source
NTB
5412NG
AYWW
1
Gate
2
3
Drain _Source
2
Drain
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB5412N/D