NTB52N10 Datasheet, PDF (1/8 Pages) ON Semiconductor – N-Channel Enhancement−Mode D2PAK

NTB52N10
Power MOSFET
52 Amps, 100 Volts
N−Channel Enhancement−Mode D²PAK
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified
• I_DSS and R_DS(on) Specified at Elevated Temperature
• Mounting Information Provided for the D²PAK Package
• Pb−Free Packages are Available
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Source Voltage (R_GS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t_pv10 ms)
Drain Current
− Continuous @ T_A = 25°C
− Continuous @ T_A = 100°C
− Pulsed (Note 1)
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
Total Power Dissipation @ T_A = 25°C (Note 2)
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
100
100
"20
"40
52
40
156
178
1.43
2.0
Vdc
Vdc
Vdc
Adc
W
W/°C
W
Operating and Storage Temperature Range
T_J, T_stg −55 to °C
+150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 50 Vdc, V_GS = 10 Vdc,
I_L(pk) = 40 A, L = 1.0 mH, R_G = 25 W)
E_AS
800 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
R_qJC
R_qJA
R_qJA
°C/W
0.7
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8in from case for 10 seconds
T_L
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu. Area 0.412 in²).
© Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 3
http://onsemi.com
V_DSS
100 V
R_DS(ON) TYP
30 mW @ 10 V
I_D MAX
52 A
N−Channel
D
G
4
12
3
D²PAK
CASE 418B
STYLE 2
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
NTB
52N10G
AYWW
12 3
Gate Drain Source
NTB52N10
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NTB52N10
NTB52N10G
Package
D²PAK
D²PAK
(Pb−Free)
Shipping^†
50 Units / Rail
50 Units / Rail
NTB52N10T4
NTB52N10T4G
D²PAK
D²PAK
(Pb−Free)
800 / Tape & Reel
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTB52N10/D