NTB45N06_11 Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 45 Amps, 60 Volts

NTB45N06, NTBV45N06
Power MOSFET
45 Amps, 60 Volts
N−Channel D²PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Higher Current Rating
• Lower R_DS(on)
• Lower V_DS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter V_SD Specification
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge
• AEC−Q101 Qualified and PPAP Capable − NTBV45N06
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t_pv10 ms)
Drain Current
− Continuous @ T_A = 25°C
− Continuous @ T_A = 100°C
− Single Pulse (t_pv10 ms)
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
Total Power Dissipation @ T_A = 25°C (Note 1)
Total Power Dissipation @ T_A = 25°C (Note 2)
Operating and Storage Temperature Range
V_DSS
V_DGR
V_GS
V_GS
I_D
I_D
I_DM
P_D
T_J, T_stg
60
60
"20
"30
45
30
150
125
0.83
3.2
2.4
−55 to
+175
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 50 Vdc, V_GS = 10 Vdc, RG = 25 W,
I_L(pk) = 40 A, L = 0.3 mH, V_DS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
E_AS
R_qJC
R_qJA
R_qJA
T_L
240 mJ
°C/W
1.2
46.8
63.2
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in pad size, (Cu Area 1.127 in²).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in²).
© Semiconductor Components Industries, LLC, 2011
1
October, 2011 − Rev. 1
http://onsemi.com
45 AMPERES, 60 VOLTS
R_DS(on) = 26 mW
N−Channel
D
G
S
4
12
D³²PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
NTx
45N06G
AYWW
12 3
Gate Drain Source
NTx45N06
x
A
Y
WW
G
= Device Code
= B or P
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTB45N06/D