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NTB30N20 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK
NTB30N20
Power MOSFET
30 Amps, 200 Volts
N−Channel Enhancement−Mode D2PAK
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified
• IDSS and RDS(on) Specified at Elevated Temperature
• Mounting Information Provided for the D2PAK Package
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Source Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA 25°C
− Continuous @ TA 100°C
− Pulsed (Note 2)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
PD
TJ, Tstg
200 Vdc
200 Vdc
Vdc
"30
"40
Adc
30
22
90
214 W
1.43 W/°C
2.0
W
−55 to °C
+175
Single Drain−to−Source Avalanche Energy −
Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL(pk) = 20 A, L = 3.0 mH, RG = 25 Ω)
EAS
mJ
450
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
RθJC
RθJA
RθJA
°C/W
0.7
62.5
50
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
2. Pulse Test: Pulse Width = 10 µs, Duty Cycle = 2%.
http://onsemi.com
VDSS
200 V
RDS(ON) TYP
68 mΩ @ VGS = 10 V
ID MAX
30 A
N−Channel
D
G
S
4
12
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
NTB30N20
LLYWW
1
Gate
2
Drain
3
Source
NTB30N20
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTB30N20
NTB30N20T4
D2PAK
D2PAK
50 Units/Rail
800 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
April, 2004 − Rev. 3
Publication Order Number:
NTB30N20/D