NTB23N03R Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK

NTB23N03R
Power MOSFET
23 Amps, 25 Volts
N−Channel D²PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
Typical Applications
• Planar HD3e Process for Fast Switching Performance
• Low R_DS(on) to Minimize Conduction Loss
• Low C_iss to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
MAXIMUM RATINGS (T_J = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
25 Vdc
Gate−to−Source Voltage − Continuous
V_GS
±20 Vdc
Drain Current
− Continuous @ T_A = 25°C, Limited by Chip
I_D
− Continuous @ T_A = 25°C, Limited by Package I_D
− Single Pulse (t_p = 10 ms)
I_DM
A
23
6.0
60
Total Power Dissipation @ T_A = 25°C
P_D
37.5 W
Operating and Storage Temperature Range
T_J, T_stg −55 to °C
150
Thermal Resistance − Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
R_qJC
T_L
3.3 °C/W
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
23 AMPERES, 25 VOLTS
R_DS(on) = 32 mW (Typ)
N−CHANNEL
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENTS
4
12
3
D²PAK
CASE 418B
STYLE 2
4 Drain
T23
N03G
AYWW
1
3
Gate ² Source
Drain
T23N03 = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 2
Publication Order Number:
NTB23N03R/D