NTB125N02R_06 Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK

NTB125N02R, NTP125N02R
Power MOSFET
125 A, 24 V N−Channel
TO−220, D²PAK
Features
• Planar HD3e Process for Fast Switching Performance
• Body Diode for Low t_rr and Q_rr and Optimized for Synchronous
Operation
• Low C_iss to Minimize Driver Loss
• Optimized Q_gd and R_DS(on) for Shoot−through Protection
• Low Gate Charge
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_J = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ T_C = 25°C
Drain Current −
Continuous @ T_C = 25°C, Chip
Continuous @ T_C = 25°C, Limited by Package
Continuous @ T_A = 25°C, Limited by Wires
Single Pulse (t_p = 10 ms)
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
Drain Current − Continuous @ T_A = 25°C
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
Drain Current − Continuous @ T_A = 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 50 V_dc, V_GS = 10 V_dc, I_L = 15.5 A_pk,
L = 1 mH, R_G = 25 W)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
V_DSS
V_GS
R_qJC
P_D
I_D
I_D
I_D
I_D
24
±20
1.1
113.6
V_dc
V_dc
°C/W
W
125 A
120.5 A
95
A
250 A
R_qJA
P_D
I_D
46 °C/W
2.72 W
18.6 A
R_qJA
P_D
I_D
T_J, T_stg
E_AS
63 °C/W
1.98 W
15.9 A
−55 to °C
150
120 mJ
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in²).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in²).
PIN ASSIGNMENT
PIN
FUNCTION
1
Gate
2
Drain
3
Source
4
Drain
http://onsemi.com
125 AMPERES, 24 VOLTS
R_DS(on) = 3.7 mW (Typ)
D
G
S
MARKING
DIAGRAMS
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
125N2RG
AYWW
12
3
4 D²PAK
CASE 418AA
STYLE 2
125N2G
AYWW
125N2x = Device Code
x
=R
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 7
Publication Order Number:
NTB125N02R/D