NTA4001N Datasheet, PDF (1/6 Pages) ON Semiconductor – Small Signal MOSFET 20 V, 238 mA, Single, N−Channel, Gate ESD Protection, SC−75

NTA4001N
Small Signal MOSFET
20 V, 238 mA, Single, N−Channel, Gate
ESD Protection, SC−75
Features
• Low Gate Charge for Fast Switching
• Small 1.6 X 1.6 mm Footprint
• ESD Protected Gate
• Pb−Free Package for “Green Manufacturing” Compliance
Applications
• Power Management Load Switch
• Level Shift
• Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
Maximum Ratings (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady State = 25°C
V_DSS
V_GS
I_D
20
V
±10
V
238 mA
Power Dissipation
(Note 1)
Steady State = 25°C P_D
300 mW
Pulsed Drain Current
t_P v 10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_DM
T_J,
T_STG
I_SD
T_L
714 mA
−55 to °C
150
238 mA
260 °C
Thermal Resistance Ratings
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R_qJA
416 °C/W
1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq.
[1 oz] including traces).
http://onsemi.com
V_(BR)DSS
20 V
R_DS(on)
Typ @ V_GS
1.5 W @ 4.5 V
2.2 W @ 2.5 V
I_D MAX
(Note 1)
238 mA
3
1
2
N−Channel
SC−75 (3−Leads)
Gate 1
3 Drain
Source 2
Top View
3
2
1
SC−75 / SOT−416
CASE 463
Style 5
MARKING DIAGRAM
3
TF D
1
2
TF = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NTA4001NT1
NTA4001NT1G
SC−75
SC−75
Pb−Free
3000 / Tape & Reel
3000 / Tape & Reel
© Semiconductor Components Industries, LLC, 2003
1
September, 2003 − Rev. 0
Publication Order Number:
NTA4001N/D